Abstract
Detailed comparisons are made of the results of two approaches to the problem of nonlinear refraction at frequencies just below the band edge in semiconductors. The physical origin o f the nonlinear dispersion is taken to be direct saturation of independent,
T
2
-broadened band states in the first model discussed. In the second model the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large nonlinearity,
X
(3)
≈ 1 e. s. u., of importance in the field of dispersive optical bistability and consistent with experimental observations of bistability, two-beam differential gain and four-wave mixing.
Reference32 articles.
1. Near-Resonance Spin-Flip Raman Scattering in Indium Antimonide
2. Anomalous Optical Absorption Limit in InSb
3. Callaway J . 1974 Quantum theory of the solid state P a rt B. New York London: Academic Press.
4. Proc. X I V In t. Conf. on Semiconductors, Kyoto, 1980 J;Dennis R. B.;Phys. Soc. Japan,1980
Cited by
86 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献