Angle-resolved photoelectron spectroscopy study of theInP(100)−(2×4)surface electronic structure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.10132/fulltext
Reference32 articles.
1. Photoelectron spectroscopy of surface states on semiconductor surfaces
2. Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds
3. Composition and structure of the InP{100}- (1 × 1) and -(4 × 2) surfaces
4. The structure of the InP(001)-(4 × 2) surface studied by scanning tunneling microscopy
5. Scanning Tunneling Microscopy Study ofInP(100)−(2×4): An Exception to the Dimer Model
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1. Electronic properties of C60/InP(001) heterostructures;Journal of Physics: Condensed Matter;2006-10-13
2. Electronic and structural analysis of Sb-inducedGaAs(100)(2×4)and(2×8)surfaces;Physical Review B;2004-05-28
3. Two-photon photoemission as a probe of unoccupied and occupied surface states of InP(100);Journal of Crystal Growth;2003-02
4. Photoemission spectroscopy of the evolution of In-terminatedInP(100)−(2×4)as a function of temperature: Surface- and cluster-related In4dlines;Physical Review B;2002-08-15
5. III-V compound semiconductor (001) surfaces;Applied Physics A: Materials Science & Processing;2002-07-01
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