Electronic and structural analysis of Sb-inducedGaAs(100)(2×4)and(2×8)surfaces-Reference-Cited by-同舟云学术

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Electronic and structural analysis of Sb-inducedGaAs(100)(2×4)and(2×8)surfaces

Published:2004-05-28 Issue:20 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Laukkanen P.,Perälä R. E.,Vaara R.-L.,Väyrynen I. J.,Kuzmin M.,Sadowski J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.205323/fulltext

Reference45 articles.

1. Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds

2. Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

3. Sb-Induced Surface States on (100) Surfaces of III-V Semiconductors

4. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)

5. Surface electronic structure of GaAs(110)1×1-Sb studied with angle-resolved photoelectron spectroscopy

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1. Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array;Applied Surface Science;2017-03

2. Adsorption and dynamics of group IV, V atoms and molecular oxygen on semiconductor group IV (0 0 1) surfaces;Journal of Physics: Condensed Matter;2016-06-14

3. The impact of the initial surface reconstruction on heteroepitaxial film growth and defect formation;Physica Scripta;2014-06-12

4. Semiconductor-insulator Interfaces, High κ Dielectrics on (In)GaAs;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-04-25

5. Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition;Applied Surface Science;2013-11

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