Experimental evidence of a Mott transition in highly doped two-dimensional confined structures-Reference-Cited by-同舟云学术

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Experimental evidence of a Mott transition in highly doped two-dimensional confined structures

Published:2004-12-20 Issue:23 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Carras Mathieu,Berger Vincent,Marcadet Xavier,Vinter Borge

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.233310/fulltext

Reference14 articles.

1. The Anderson-Mott transition

2. Hall coefficient factor for polar mode scattering in n-type GaAs

3. Hydrogenic impurity states in a quantum well: A simple model

4. Efficient self-consistent method using basis splines for the investigation of interacting two-dimensional electrons in a random impurity potential

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1. Carrier dynamics of AlGaAs/AlAs asymmetric double quantum wells with different barrier thickness;Optical Materials Express;2022-03-01

2. Hartree-Fock approximation for Exciton Mott transition in double quantum well: Direct and Indirect exciton diamagnetism;Physica E: Low-dimensional Systems and Nanostructures;2020-05

3. Effect of confining potential on the exciton stability at various locations in a parabolic and square quantum ring;Physica Scripta;2020-02-21

4. HgSe Self-Doped Nanocrystals as a Platform to Investigate the Effects of Vanishing Confinement;ACS Applied Materials & Interfaces;2017-10-06

5. Diamagnetic susceptibility: An indicator of pressure induced donor localization in a double quantum well;Superlattices and Microstructures;2016-04

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