Effect of thermally induced charged-carrier transfer on near-infrared intersubband transitions inInxGa1−xAs/AlAs/AlyAs1−ySb/InPcoupled quantum-well structure-Reference-Cited by-同舟云学术

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Effect of thermally induced charged-carrier transfer on near-infrared intersubband transitions inInxGa1−xAs/AlAs/AlyAs1−ySb/InPcoupled quantum-well structure

Published:2001-05-31 Issue:23 Volume:63 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Neogi A.,Yoshida H.,Wada O.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.235320/fulltext

Reference13 articles.

1. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

2. Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells

3. Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes

4. Efficient All-Optical Interband Light Modulation by Ultrafast Manipulation of Intersubband Transitions in an Asymmetric Quantum Well*

5. Ultrafast all-optical switching at 1.3 [micro sign]m/1.55 [micro sign]m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three Operation Modes for Tb/s All-Optical Switching With Intersubband Transitions in InGaAs/AlAs/AlAsSb Quantum Wells;IEEE Journal of Quantum Electronics;2012-07

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