Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>MnB</mml:mi><mml:msub><mml:mi mathvariant="normal">i</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi mathvariant="normal">T</mml:mi><mml:msub><mml:mi mathvariant="normal">e</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> antiferromagnets-Reference-Cited by-同舟云学术

Interlayer ferroelectric polarization modulated anomalous Hall effect in four-layer MnBi2Te4 antiferromagnets

Published:2024-05-02 Issue:17 Volume:109 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Niu Ziyu¹,Yu Xiang-Long²³,Shao Dingfu⁴,Jing Xixiang¹,Hou Defeng¹,Li Xuhong¹,Sun Jing¹,Shi Junqin¹⁵,Fan Xiaoli¹⁵,Cao Tengfei¹⁵^ORCID

Affiliation:

1. Research Center for Advanced Lubrication and Sealing Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, People's Republic of China

2. Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

3. International Quantum Academy, Shenzhen 518048, China

4. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China

5. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, People's Republic of China

Funder

Fundamental Research Funds for the Central Universities

Natural Science Basic Research Program of Shaanxi Province

Science Technology on Reactor System Design Technology Laboratory, Nuclear Power Institute of China

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.109.174405/fulltext

Reference46 articles.

1. Engineering symmetry breaking in 2D layered materials

2. Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

3. Magnetoresistance generated from charge-spin conversion by anomalous Hall effect in metallic ferromagnetic/nonmagnetic bilayers

4. Intrinsic magnetic topological insulators in van der Waals layered MnBi 2 Te 4 -family materials

5. Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi 2 Te 4

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