Near-surface structure of low-energy-argon-bombarded Si(100)-Reference-Cited by-同舟云学术

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Near-surface structure of low-energy-argon-bombarded Si(100)

Published:1994-12-15 Issue:24 Volume:50 Page:18453-18468
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Huang L. J.,Lau W. M.,Tang H. T.,Lennard W. N.,Mitchell I. V.,Schultz P. J.,Kasrai M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.18453/fulltext

Reference58 articles.

1. Surface science aspects of etching reactions

2. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon

3. Application of the Ion Bombardment Cleaning Method to Titanium, Germanium, Silicon, and Nickel as Determined by Low‐Energy Electron Diffraction

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1. Characterization of argon ion irradiation induced changes in microstructure and mechanical property of binary Zr−2.9 wt% Sn alloy;Radiation Physics and Chemistry;2022-01

2. Effects of ion sputtering on plutonium surfaces;Journal of Nuclear Materials;2020-11

3. Order-of-magnitude differences in retention of low-energy Ar implanted in Si and SiO2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-09

4. Room temperature bonding of SiO2and SiO2by surface activated bonding method using Si ultrathin films;Japanese Journal of Applied Physics;2016-01-18

5. Measurement of microscopic surface deformation due to low energy ion bombardment on Si(111);Surface Science;2014-03

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