Interface mode in Si/Ge superlattices: Theory and experiments
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.8959/fulltext
Reference25 articles.
1. Atomic intermixing in short period GaAs/AlAs superlattices
2. Cation interdiffusion in GaAs‐AlAs superlattices measured with Raman spectroscopy
3. Excitons, phonons, and interfaces in GaAs/AlAs quantum-well structures
4. Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)nsuperlattices
5. Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1−xGexheterostructures
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1. Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs.ab initiocalculations;Journal of Applied Physics;2017-02-28
2. Phonon transmission acrossMg2Si/Mg2Si1−xSnxinterfaces: A first-principles-based atomistic Green's function study;Physical Review B;2015-05-22
3. GeSi Raman spectra vs. local clustering/anticlustering: Percolation scheme and ab initio calculations;Journal of Applied Physics;2013-07-21
4. Effects of atomic relaxation on phonon dispersion relations and thermal properties of ultrathin (Si)n(Ge)n[001] superlattices;Physical Review B;2013-02-07
5. Temperature dependence of the Raman spectrum in Ge1−ySnyand Ge1−x−ySixSnyalloys;Physical Review B;2011-11-02
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