Analysis of island morphology in a model for Pb-mediated growth of Ge on Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.235328/fulltext
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1. Simulation of Surfactant Effects on Growth of Semiconductor Hetero-Epitaxial Sb-Ge/Si(111);Communications in Theoretical Physics;2011-12
2. Fragmentation pathways of nanofractal structures on surfaces;Physical Review B;2011-09-09
3. GROWTH OF Si ATOMIC WIRES ON Pb-MEDIATED Si(111)7 × 7 SUBSTRATE;International Journal of Nanoscience;2011-02
4. Mean-field approach to Pb-mediated growth of Ge on Si(111): Comparison with experiment and kinetic Monte Carlo simulations;Physical Review B;2007-01-09
5. A historic perspective of FIM and STM studies of surface diffusion;Materials Science and Engineering: A;2003-07
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