Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses-Reference-Cited by-同舟云学术

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Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses

Published:2015-12-11 Issue:22 Volume:92 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Yang Zihao,Kent Thomas F.,Yang Jing,Jin Hyungyu,Heremans Joseph P.,Myers Roberto C.

Funder

National Science Foundation

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.92.224416/fulltext

Reference39 articles.

1. Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K

2. Epitaxial ferromagnetic nanoislands of cubic GdN in hexagonal GaN

3. Colossal Magnetic Moment of Gd in GaN

4. Intrinsic ferromagnetism due to cation vacancies in Gd-doped GaN: First-principles calculations

5. Interstitial-nitrogen- and oxygen-induced magnetism in Gd-doped GaN

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1. Simultaneous paramagnetic and persistence-luminescence in GAGG:Ce,Pr nanoparticles synthesized by sol-gel for biomedical applications;Journal of Applied Physics;2019-08-28

2. Dual quantum confinement and anisotropic spin splitting in the multivalley semimetal PtSe2;Physical Review B;2019-01-25

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