Interstitial-nitrogen- and oxygen-induced magnetism in Gd-doped GaN
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.081202/fulltext
Reference28 articles.
1. GaN-based magnetic semiconductors for nanospintronics
2. Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy
3. Colossal Magnetic Moment of Gd in GaN
4. Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
5. Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN
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