Full-band-structure calculation of ε→2(ω) and χ→(2)(-2ω;ω,ω) for (GaAs)n/(GaP)n(n=1,2) superlattices on GaAs(001) substrates
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1831/fulltext
Reference17 articles.
1. Confined optical phonons in GaAs/GaP strained layer superlattices
2. Optical properties of GaAs/GaP strained‐layer superlattices
3. Ellipsometric study of GaAs/GaP superlattices
4. Prediction of direct band gaps in monolayer (001) and (111) GaAs/GaP superlattices
5. First-principles study of intervalley mixing: Ultrathin GaAs/GaP superlattices
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