Si-C bonding in films prepared by heterofullerene deposition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.125321/fulltext
Reference36 articles.
1. Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge technique
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3. Chemical bonding analysis of a-SiC : H films by Raman spectroscopy
4. Tetrahedron model for the dielectric function of amorphous silicon-carbon alloys
5. Microscopic struture of amorphous covalent alloys probed byab initiomolecular dynamics: SiC
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