Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.075406/fulltext
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4. Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation
5. Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands
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2. Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing;Japanese Journal of Applied Physics;2018-03-20
3. Review—Towards the Next Generation of Thermoelectric Materials: Tailoring Electronic and Phononic Properties of Nanomaterials;ECS Journal of Solid State Science and Technology;2017
4. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures;Advances in Semiconductor Nanostructures;2017
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