Barrier model in muon implantation and application to Lu2O3-Reference-Cited by-同舟云学术

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Barrier model in muon implantation and application to Lu2O3

Published:2018-09-11 Issue:11 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Vilão R. C.,Vieira R. B. L.,Alberto H. V.,Gil J. M.,Weidinger A.,Lichti R. L.,Mengyan P. W.,Baker B. B.,Lord J. S.

Funder

Fundação para a Ciência e a Tecnologia

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.115201/fulltext

Reference45 articles.

1. ISIS muons for materials and molecular science studies

2. The first 25 years of semiconductor muonics at ISIS, modelling the electrical activity of hydrogen in inorganic semiconductors and high-κdielectrics

3. Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements

4. Muonium states in semiconductors

5. Shallow donor versus deep acceptor state in II–VI semiconductor compounds

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1. Muonium reaction in semiconductors and insulators: The role of the transition state;Journal of Physics: Conference Series;2023-03-01

2. Ambipolarity of diluted hydrogen in wide-gap oxides revealed by muon study;Journal of Applied Physics;2022-09-14

3. Hydrogen states in mixed-cation CuIn(1−x)GaxSe2 chalcopyrite alloys: a combined study by first-principles density-functional calculations and muon-spin spectroscopy;Philosophical Magazine;2021-09-07

4. Structural properties and anion dynamics of yttrium dihydride and photochromic oxyhydride thin films examined by in situ μ+SR;Physical Review B;2021-06-25

5. Reply to “Comment on ‘Role of the transition state in muon implantation’ and ‘Thermal spike in muon implantation”’;Physical Review B;2020-02-26

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