Shallow donor versus deep acceptor state in II–VI semiconductor compounds-Reference-Cited by-同舟云学术

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Shallow donor versus deep acceptor state in II–VI semiconductor compounds

Published:2003-02 Issue:1-4 Volume:326 Page:124-127
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Weidinger A.,Gil J.M.,Alberto H.V.,Vilão R.C.,Piroto Duarte J.,Ayres de Campos N.,Cox S.F.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Novel Muonium State in CdS

2. Experimental Confirmation of the Predicted Shallow Donor Hydrogen State in Zinc Oxide

3. Shallow donor muonium states in II-VI semiconductor compounds

4. Muonium states in semiconductors

5. Si29Hyperfine Structure of Anomalous Muonium in Silicon: Proof of the Bond-Centered Model

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1. On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis;Crystals;2020-01-12

2. Modelling isolated hydrogen impurity in Lu2O3 with muonium spectroscopy;EPJ Web of Conferences;2020

3. Paramagnetic rare-earth oxide Nd2O3 investigated by muon spin spectroscopy;Physical Review B;2019-11-12

4. Thermal spike in muon implantation;Physical Review B;2019-05-29

5. Barrier model in muon implantation and application to Lu2O3;Physical Review B;2018-09-11

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