Erratum: Many-electron effects on the dielectric function of cubic In2O3 : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93 , 045203 (2016)]-Reference-Cited by-同舟云学术

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Erratum: Many-electron effects on the dielectric function of cubic In2O3 : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93 , 045203 (2016)]

Published:2016-12-15 Issue:23 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Feneberg Martin,Nixdorf Jakob,Lidig Christian,Goldhahn Rüdiger,Galazka Zbigniew,Bierwagen Oliver,Speck James S.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.239905/fulltext

Reference2 articles.

1. Temperature dependence of the dielectric function in the spectral range (0.5–8.5) eV of an In2O3 thin film

2. Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

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1. Review—Extremely Thin Amorphous Indium Oxide Transistors;Advanced Materials;2023-12-08

2. Physicochemical Analysis of Nanoscale Metal Oxide Thin Film Precursors via Infrared Spectroscopic Ellipsometry;The Journal of Physical Chemistry C;2023-08-07

3. Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift;APL Materials;2019-02

4. Controlling the electrical conductivity of ternary wurtzite-type and metastable β-AgGaO2 by impurity doping;AIP Advances;2018-08

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