First-principles calculations of the structural properties ofScSi2and the formation ofScSi2−xon the Si(111) surface
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.035333/fulltext
Reference31 articles.
1. Epitaxial growth of rare‐earth silicides on (111) Si
2. Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties
3. Role of silicon vacancies in yttrium-disilicide compounds from ab initio calculations
4. Surface structures of scandium silicides grown on Si(111) studied by STM, AFM and electron diffraction
5. Structural determination of two-dimensionalYSi2epitaxially grown on Si(111)
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1. Does scandium resemble transition or rare earth metals when it is grown on silicon surfaces?;Journal of Applied Physics;2013-01-28
2. First principles calculations of the Sc adsorption on Si(001)-c(2×4);Surface Science;2012-09
3. Structural properties of the formation of yttrium germanides thin films on the Si(111) surface;Thin Solid Films;2009-06
4. First principles total energy calculations of the structural and electronic properties of YGe2 in AlB2 type structures;Solid State Sciences;2009-01
5. Growth of epitaxial thin films of scandium nitride on 100-oriented silicon;Journal of Crystal Growth;2008-05
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