Electron–acoustic-phonon interaction and resonant Raman scattering in Ge quantum dots: Matrix and quantum confinement effects-Reference-Cited by-同舟云学术

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Electron–acoustic-phonon interaction and resonant Raman scattering in Ge quantum dots: Matrix and quantum confinement effects

Published:2006-09-14 Issue:11 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Huntzinger Jean-Roch,Mlayah Adnen,Paillard Vincent,Wellner Anja,Combe Nicolas,Bonafos Caroline

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.115308/fulltext

Reference61 articles.

1. Resonant one-acoustic-phonon Raman scattering in multiple quantum wells

2. Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots

3. Resonant Raman scattering by acoustical phonons in Ge/Si self-assembled quantum dots: Interferences and ordering effects

4. Spatial correlations and Raman scattering interferences in self-assembled quantum dot multilayers

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2. Raman energy density in the context of acoustoplasmonics;Physical Review B;2022-10-28

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5. Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime;Nano Futures;2020-04-14

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