Phonoionization ofA+states in Si under uniaxial stress: Influence of the valence-band structure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.5535/fulltext
Reference16 articles.
1. Energy-Resolved Measurements of the Phonon-Ionization ofD−andA+Centers in Silicon with Superconducting-Al Tunnel Junctions
2. D- state in silicon
3. Uniaxial Stress and Magnetic Field Effects on Far-Infrared Photoconductivity of D- Centers in P, As and Li Doped Si Crystals
4. Continuous high-resolution phonon spectroscopy up to 12 meV: Measurement of theA+binding energies in silicon
5. Statistical-Mechanical Theory of Irreversible Processes. I. General Theory and Simple Applications to Magnetic and Conduction Problems
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon;Semiconductors;2016-11
2. Investigation of positively charged acceptor states in Si and Ge under uniaxial stress by phonon induced conduction;Annalen der Physik;1995
3. Recent developments in phonoconductivity spectroscopy of shallow bound states in semiconductors;Physica B: Condensed Matter;1991-02
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