Continuous high-resolution phonon spectroscopy up to 12 meV: Measurement of theA+binding energies in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.5868/fulltext
Reference9 articles.
1. Energy-Resolved Measurements of the Phonon-Ionization ofD−andA+Centers in Silicon with Superconducting-Al Tunnel Junctions
2. H−-like impurity centers and molecular complexes created by them in semiconductors
3. Photoconductivity from shallow negative donor ions in silicon: A new far‐infrared detector
4. Theory of shallow acceptor states in Si and Ge
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