Temperature dependence of electron-capture aftereffects in the semiconductorIn2O3-Reference-Cited by-同舟云学术

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Temperature dependence of electron-capture aftereffects in the semiconductorIn2O3

Published:1984-01-15 Issue:2 Volume:29 Page:1109-1111
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bibiloni A. G.,Desimoni J.,Massolo C. P.,Mendoza-Zélis L.,Pasquevich A. F.,Sánchez F. H.,López-García A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.1109/fulltext

Reference18 articles.

1. Nuclear quadrupole interaction studies by perturbed angular correlations

2. Electrical properties of In2O3

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5. Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon;The Journal of Physical Chemistry C;2018-07-03

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