Electronic structure, magnetic properties, spin orientation, and doping effect in Mn3Si2Te6
Author:
Funder
U.S. Department of Energy
Office of Science
Basic Energy Sciences
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.107.054430/fulltext
Reference52 articles.
1. Metal-insulator transitions
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1. Large magneto-optical effects in the van der Waals ferrimagnet Mn3Si2Te6;Physical Review B;2024-09-04
2. Critical behavior and magnetocaloric effect in quasi-two-dimensional Mn3Si2Se6;Journal of Alloys and Compounds;2024-09
3. Tuning the colossal magnetoresistance in ( Mn1−xMgx)3Si2Te6 by engineering the gap and magnetic properties via doping and pressure;Physical Review B;2024-05-21
4. Nonequilibrium carrier and phonon dynamics in the ferrimagnetic semiconductor Mn3Si2Te6;Physical Review B;2024-05-17
5. Switchable in-plane anomalous Hall effect by magnetization orientation in monolayer Mn3Si2Te6;Physical Review B;2024-04-18
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