Effect of stress on dopant and defect diffusion in Si: A general treatment
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.045205/fulltext
Reference20 articles.
1. Pressure and Stress Effects on Diffusion in Si
2. Activation volume for boron diffusion in silicon and implications for strained films
3. Effects of hydrostatic pressure on dopant diffusion in silicon
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