Anisotropic dependence of the magnetic transition on uniaxial pressure in the Kondo semiconductors CeT2Al10 ( T=Ru and Os)
Author:
Funder
Japan Society for the Promotion of Science
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.245130/fulltext
Reference34 articles.
1. Heavy fermion semiconductors
2. Formation of an anisotropic energy gap in the valence-fluctuating system of CeNiSn
3. Hybridization gap inCe3Bi4Pt3
4. Electrical-resistance anomalies in a Ce-Ru-Sn phase
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1. Design, calibration, and performance of a uniaxial pressure cell for neutron scattering studies of quantum magnetism;Review of Scientific Instruments;2023-10-01
2. Effect of 3p- and 5d-electron doping on the Kondo Semiconductor CeFe2Al10;Journal of Physics: Conference Series;2022-03-01
3. Crossover from Kondo semiconductor to metallic antiferromagnet with 5d -electron doping in CeFe2Al10;Physical Review B;2021-10-05
4. Magnetic structure and crystal field excitations of NdOs2Al10: a neutron scattering study;Journal of Physics: Condensed Matter;2021-04-23
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