Photoinhibition of the quantum confined Stark effect in piezoelectric multiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.15469/fulltext
Reference13 articles.
1. Effect of an electric field on the luminescence of GaAs quantum wells
2. Linear and nonlinear optical properties of semiconductor quantum wells
3. Enhancement of quantum confined Stark effect in a graded gap quantum well
4. Electroabsorption and electrorefraction in GaAs/AlGaAs waveguides containing asymmetric coupled quantum wells
5. Electromodulation of the electronic structure and optical properties of [111]-growth-axis superlattices
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1. Infrared absorption and current–voltage characteristic of GaAs/AlGaAs multiple quantum wells on GaAs (111)A substrate grown by solid source molecular beam epitaxy;Journal of Crystal Growth;2006-02
2. Morphology and optical properties of GaAs layers grown on (1 1 1)A GaAs substrates in N2ambient by metalorganic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2004-05
3. Electronic parameters and interfacial properties ofGaAs/AlxGa1−xAsmultiquantum wells grown on(111)AGaAs by metalorganic vapor phase epitaxy;Physical Review B;2003-07-10
4. Confirmation of the pyroelectric coefficient of strained InxGa1−xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy;Journal of Applied Physics;2002-03
5. Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates;Journal of Applied Physics;2001-07-15
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