Nonuniform segregation of Ga at AlAs/GaAs heterointerfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.1689/fulltext
Reference33 articles.
1. Ga segregation and the effect of Si and Ge interlayers at the GaAs(100)/AlAs heterostructure
2. Interface segregation and clustering in strained-layer InGaAs/GaAs heterostructures studied by cross-sectional scanning tunneling microscopy
3. Replacement of group‐III atoms on the growing surface during migration‐enhanced epitaxy
4. Effects of disorder on the Raman spectra of GaAs/AlAs superlattices
5. Experimental study of diffusion and segregation in a Si-(GexSi1−x) heterostructure
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