Anomalous x-ray scattering study of the growth of inverted quantum hut structures in a Si-Ge superlattice emitting strong photoluminescence-Reference-Cited by-同舟云学术

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Anomalous x-ray scattering study of the growth of inverted quantum hut structures in a Si-Ge superlattice emitting strong photoluminescence

Published:2014-05-12 Issue:20 Volume:89 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sharma Manjula,Sanyal Milan K.,Satpati Biswarup,Seeck Oliver H.,Ray Samit K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.89.205304/fulltext

Reference27 articles.

1. Atoms and circuits unite in silicon

2. X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

3. Three-Dimensional Si/Ge Quantum Dot Crystals

4. Si/Ge nanostructures

5. Silicon-Germanium Strained Layer Materials in Microelectronics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local excitons in Si/Ge inverted quantum huts (IQHs) embedded Si;Journal of Physics: Condensed Matter;2021-08-05

2. Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots;Scientific Reports;2018-05-14

3. Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements;Scientific Reports;2015-10-28

4. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering;Nanotechnology;2015-10-12

5. Excitation power-independent photoluminescence of inverted quantum hut structures embedded in SiGe superlattice;Applied Physics A;2015-02-05

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