Rashba effect in inversion layers onp-type InAs MOSFET’s
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.245340/fulltext
Reference18 articles.
1. Effects of inversion asymmetry on electron energy band structures in GaSb/InAs/GaSb quantum wells
2. Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density
3. Effect of the heterointerface on the spin splitting in modulation doped InxGa1−xAs/InP quantum wells for B→0
4. Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure
5. Zero-field spin splitting in an invertedIn0.53Ga0.47As/In0.52Al0.48Asheterostructure: Band nonparabolicity influence and the subband dependence
Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spin injection, relaxation, and manipulation in GaN-based semiconductors;Advances in Physics: X;2023-01-12
2. The HUP and the ES in Accumulation of Non-parabolic Semiconductors;Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures;2022
3. The HUP and Magneto ES in Accumulation Layers;Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures;2022
4. Laser-driven anisotropic and nonlinear Rashba spin splitting in GaAs monolayer;Physical Review B;2021-08-23
5. Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors;RSC Advances;2020
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3