Intervalley scattering in hexagonal boron nitride
Author:
Funder
Agence Nationale de la Recherche
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.035207/fulltext
Reference30 articles.
1. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
2. Hexagonal boron nitride is an indirect bandgap semiconductor
3. Calculation of ground-state and optical properties of boron nitrides in the hexagonal, cubic, and wurtzite structures
4. Ab initiocalculation of the structural and electronic properties of carbon and boron nitride using ultrasoft pseudopotentials
5. Quasiparticle band structure of bulk hexagonal boron nitride and related systems
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