Use of low-temperature Hall effect to measure dopant activation: Role of electron-electron interactions
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.76.193305/fulltext
Reference28 articles.
1. Pushing the Limits
2. Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon
3. Dopant electrical activity and majority-carrier mobility in B- and Sb-δ-doped Si thin films
4. Delta-type doping profiles in silicon
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