Characteristic jump in the electrical properties of aPd∕AlN∕Si-based device on exposure to hydrogen-Reference-Cited by-同舟云学术

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Characteristic jump in the electrical properties of aPd∕AlN∕Si-based device on exposure to hydrogen

Published:2007-02-06 Issue:7 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Thakur J. S.,Prakasam H. E.,Zhang Linfeng,McCullen E. F.,Rimai L.,García-Suárez V. M.,Naik R.,Ng K. Y. S.,Auner G. W.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.075308/fulltext

Reference31 articles.

1. A hydrogen−sensitive MOS field−effect transistor

2. Hydrogen sensitivity of palladium–thin-oxide–silicon Schottky barriers

3. Detection of hydrogen from the photodissociative splitting of water through hydrogen‐oxygen separation over a thin Pd film

4. Effects of competitive carbon monoxide adsorption on the hydrogen response of metal–insulator–semiconductor sensors: the role of metal film morphology

5. Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors

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1. Hydrogen-tuning of magnetic properties of Pd based membrane alloys;Materials Today Communications;2023-06

2. Effect of Doping Elements on Magnetic Properties of Palladium-Based Membrane Alloys;Moscow University Physics Bulletin;2022-10

3. Size-dependent magnetic moments in ultrafine diamagnetic systems;Journal of Applied Physics;2011-06-15

4. The Sensing Mechanism and the Response Simulation of the MIS Hydrogen Sensor;IEEE Sensors Journal;2009-10

5. Investigation of the occupation behavior for oxygen atoms in AlN films using Raman spectroscopy;Journal of Applied Physics;2008-03-15

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