Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors-Reference-Cited by-同舟云学术

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Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors

Published:1997-05 Issue:3 Volume:15 Page:1228-1234
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Chen Liang-Yu,Hunter Gary W.,Neudeck Philip G.,Bansal Gaurav,Petit Jeremy B.,Knight Dak

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580600

Cited by 72 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of H and Pd atoms on the migration of He atoms in 3C–SiC;Progress in Nuclear Energy;2023-11

2. Palladium clusters, free and supported on surfaces, and their applications in hydrogen storage;Physical Chemistry Chemical Physics;2022

3. Highly Fast Response of Pd/Ta2O5/SiC and Pd/Ta2O5/Si Schottky Diode-Based Hydrogen Sensors;Sensors;2021-02-03

4. Solid state reactions between SiC and Ir;Journal of the European Ceramic Society;2019-11

5. Palladium interaction with silicon carbide;Journal of Nuclear Materials;2015-07

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