Surface structure and doping-induced etching of Si(100) by chlorine: First-principles study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2210/fulltext
Reference26 articles.
1. Supersonic molecular beam scattering of Cl2 from clean and alkali-covered Si(100)2 × 1
2. Chemisorption of HCl, Cl2 and F2 on the Si(100) surface
3. Reactions of chlorine with Si(100) and Si(111): adsorption and desorption kinetics
4. Chlorine molecular beam scattering study on Si(100)2 × 1: desorption products
5. Study on Chlorine Adsorbed Silicon Surface Using Soft-X-Ray Photoemission Spectroscopy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Calculated energetics for adsorption and desorption steps during etching of Si(110) surface by Cl;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-01
2. Chemisorption of a single oxygen molecule on the Si(100) surface: Initial oxidation mechanisms;Physical Review B;2000-12-15
3. Calculation of energy barriers for the chlorine etching of Si(100) surface with step edges;Surface Science;2000-01
4. Energetics for bonding and detachment steps in etching of Si by Cl;Surface Science;1999-09
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