Energetics for bonding and detachment steps in etching of Si by Cl
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Cl2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy
2. Chlorine bonding sites and bonding configurations on Si(100)–(2×1)
3. Chemical sputtering of Si related to roughness formation of a Cl‐passivated Si surface
4. Reaction of silicon with chlorine and ultraviolet laser induced chemical etching mechanisms
5. Surface structure and doping-induced etching of Si(100) by chlorine: First-principles study
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1. Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale;Nanomanufacturing and Metrology;2021-10-27
2. Silicon etching in Cl2 environment;Applied Surface Science;2006-11
3. Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl2–Ar plasmas with changing mixtures;Applied Physics Letters;2003-06-30
4. Evaluation of desorption activation energy of SiCl2 molecules;Surface Science;2003-05
5. Computed energetics for etching of the Si() surface by F and Cl atoms;Surface Science;2002-01
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