Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers-Reference-Cited by-同舟云学术

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Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers

Published:2012-01-05 Issue:3 Volume:85 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Wu P. H.,Huang Y. S.,Hsu H. P.,Chrastina D.,Isella G.,von Känel H.,Tiong K. K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.035303/fulltext

Reference37 articles.

1. Electrically Tunable Silicon 2-D Photonic Bandgap Structures

2. Blue luminescent silicon nanocrystals prepared by nanosecond laser ablation and stabilized in electronically compatible spin on glasses

3. An all-silicon Raman laser

4. Direct gap related optical transitions in Ge/SiGe quantum wells

5. High-mobility Si and Ge structures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Ge/Si0.16Ge0.84 multiple quantum wells on Ge-on-Si virtual substrate using piezoreflectance spectroscopy;Solid State Communications;2013-08

2. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84Multiple Quantum Wells on Ge Virtual Substrate;Advances in Condensed Matter Physics;2013

3. Above-room-temperature photoluminescence from a strain-compensated Ge/Si0.15Ge0.85 multiple-quantum-well structure;Applied Physics Letters;2012-04-02

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