Formation times of electric-field domains in doped GaAs-AlAs superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.1502/fulltext
Reference11 articles.
1. New Transport Phenomenon in a Semiconductor "Superlattice"
2. Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain
3. Electric-field domains in semiconductor superlattices: Resonant and nonresonant tunneling
4. New formation mechanism of electric field domain due to Γ‐Xsequential tunneling in GaAs/AlAs superlattices
5. High‐field domain formation in GaAs/AlGaAs superlattices
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