Conductance quantization in etchedSi∕SiGequantum point contacts-Reference-Cited by-同舟云学术

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Conductance quantization in etchedSi∕SiGequantum point contacts

Published:2006-07-18 Issue:3 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Scappucci G.,Gaspare L. Di,Giovine E.,Notargiacomo A.,Leoni R.,Evangelisti F.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.035321/fulltext

Reference53 articles.

1. High-mobility Si and Ge structures

2. Conductivity of a two-dimensional electron gas in a Si/SiGe heterostructure near the metal-insulator transition: Role of the short- and long-range scattering potential

3. Observation of the apparent metal–insulator transition of high-mobility two-dimensional electron system in a Si/Si1−xGex heterostructure

4. Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well

5. Direct measurements of the spin and valley splittings in the magnetization of aSi∕SiGequantum well in tilted magnetic fields

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1. Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a Resistance Standard;Advanced Quantum Technologies;2023-05-18

2. Valley Subband Splitting in Bilayer Graphene Quantum Point Contacts;Physical Review Letters;2018-12-20

3. Resolving the spin splitting in the conduction band of monolayer MoS2;Nature Communications;2017-12

4. Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts;Journal of Applied Physics;2016-04-07

5. Spin splitting generated in a Y-shaped semiconductor nanostructure with a quantum point contact;Journal of Applied Physics;2015-07-07

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