Dynamics of anti-Stokes photoluminescence in type-IIAlxGa1−xAs−GaInP2heterostructures: The important role of long-lived carriers near the interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.R4375/fulltext
Reference14 articles.
1. Auger recombination within Landau levels in a two-dimensional electron gas
2. High-Efficiency Energy Up-Conversion by an "Auger Fountain" at an InP-AIInas Type-II Heterojunction
3. Interface-induced conversion of infrared to visible light at semiconductor interfaces
4. Interfacial structural characteristics and grain-size limits in nanocrystalline materials crystallized from amorphous solids
5. Mechanisms of photoluminescence upconversion at the GaAs/(ordered) GaInP2 interface
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