Author:
Scheffler H.,Baber N.,Dadgar A.,Bimberg D.,Winterfeld J.,Schumann H.
Publisher
American Physical Society (APS)
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Osmium Related Deep Levels in Indium Phosphide;physica status solidi (a);1999-02
2. 4d- and 5d-transition metal acceptor doping of InP;Journal of Crystal Growth;1997-01
3. Deep-level transient-spectroscopy study of rhodium in indium phosphide;Physical Review B;1996-03-15
4. indium phosphide (InP), capture and emission data of transition metal impurities;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
5. indium phosphide (InP), energy levels of transition metal impurities;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.