Properties of InP doped with 4d ions-Reference-Cited by-同舟云学术

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Properties of InP doped with 4d ions

Published:1987-12-01 Issue:12 Volume:2 Page:772-778
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Bremond G,Nouailhat A,Guillot G,Toudic Y,Lambert B,Gauneau M,Coquille R,Deveaud B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Transition-metal impurities in III-V compounds

2. On the position of energy levels related to transition-metal impurities in III-V semiconductors

3. Redistribution of Fe in thermally annealed semi‐insulating InP(Fe): Determination of Fe diffusion coefficient in InP

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-Infrared Photoluminescence in Mo-Doped Single Crystals of CuAlS2;Japanese Journal of Applied Physics;1999-02-15

2. Osmium Related Deep Levels in Indium Phosphide;physica status solidi (a);1999-02

3. Ruthenium: A superior compensator of InP;Applied Physics Letters;1998-12-28

4. Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition;Journal of Crystal Growth;1998-12

5. 4d- and 5d-transition metal acceptor doping of InP;Journal of Crystal Growth;1997-01

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