Critical terrace width for step flow growth: Effect of attachment-detachment asymmetry and step permeability
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.245419/fulltext
Reference22 articles.
1. The growth of crystals and the equilibrium structure of their surfaces
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3. Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer I. Reflection electron microscope observation of the growth with and without a Sn layer mediate the step flow
4. Surfactant epitaxy of Si on Si(111) surface mediated by a Sn layer II. Critical step flow of the growth with and without mediate
5. THE TRANSITION TO STEP FLOW GROWTH ON THE CLEAN AND SURFACTANT COVERED Si(111) SURFACE STUDIED BY IN-SITU LEEM
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