Optical and transport properties of piezoelectric [111]-oriented strainedGa1−xInxSb/GaSb quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.17885/fulltext
Reference19 articles.
1. Theory of semiconductor superlattice electronic structure
2. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices
3. Optical and infrared studies of [111] InGaAs/AlGaAs strained-layer superlattices
4. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
5. Optically induced variability of the strain-induced electric fields in (111) GaSb/AlSb quantum wells
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1. Molecular beam epitaxial growth and electronic transport of GaInSb/GaSb (111) quantum wells;AIP Advances;2022-04-01
2. High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates;IEEE Electron Device Letters;2013-03
3. Si doping forn- andp-type conduction in AlxGa1−x As grown on GaAs(311)Aby molecular-beam epitaxy;Journal of Applied Physics;2003-03
4. Excitons in strained (Ga,In)Sb/GaSb quantum wells;Physical Review B;1997-02-15
5. The growth of antimonides by MOVPE;Progress in Crystal Growth and Characterization of Materials;1997-01
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