Abinitiostudy of fully relaxed divacancies in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.3813/fulltext
Reference28 articles.
1. Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
2. First-principles study of fully relaxed vacancies in GaAs
3. Energetics of the As vacancy in GaAs: The stability of the 3+ charge state
4. Tight-binding molecular-dynamics study of point defects in GaAs
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