Towards identification of silicon vacancy-related electron paramagnetic resonance centers in 4H -SiC
Author:
Funder
Vetenskapsrådet
Knut och Alice Wallenbergs Stiftelse
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.035207/fulltext
Reference49 articles.
1. Negatively charged Si vacancy in4HSiC: A comparison between theory and experiment
2. Coherent control of single spins in silicon carbide at room temperature
3. Silicon vacancy related defect in 4H and 6H SiC
4. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
5. Room-temperature quantum microwave emitters based on spin defects in silicon carbide
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