Mechanism of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy on a Si(001) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.10748/fulltext
Reference20 articles.
1. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
2. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
3. Phase-Locked Epitaxy Using RHEED Intensity Oscillation
4. Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth
5. Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high‐energy electron diffraction during molecular beam epitaxy
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1. Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED;Surface Science;2018-11
2. Anisotropic kinetics on growing Ge(001) surfaces;Surface Science;2009-03
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