Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K-Reference-Cited by-同舟云学术

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and295K

Published:2006-12-14 Issue:23 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ono Yukinori,Morizur Jean-Francois,Nishiguchi Katsuhiko,Takashina Kei,Yamaguchi Hiroshi,Hiratsuka Kazuma,Horiguchi Seiji,Inokawa Hiroshi,Takahashi Yasuo

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.235317/fulltext

Reference39 articles.

1. Electronic Properties of Doped Semiconductors

2. Oxide-Charge-Induced Impurity Level in Silicon Inversion Layers

3. Observation of resonant tunneling in silicon inversion layers

4. Far-infrared and electrical transport studies of oxide-charge-induced localized states in a quasi-two-dimensional system

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