Optical, electronic, and structural properties of ScAlMgO4
Author:
Funder
Narodowe Centrum Nauki
Agence Nationale de la Recherche
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.107.085205/fulltext
Reference51 articles.
1. ScAlMgO4: an Oxide Substrate for GaN Epitaxy
2. Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates
3. Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates
4. Epitaxial growth of GaN films on lattice-matched ScAlMgO4substrates
5. Structural classification ofRAO3(MO)n compounds (R =Sc, In, Y, or lanthanides; A =Fe(III), Ga, Cr, or Al; M =divalent cation; n = 1–11)
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1. Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy;physica status solidi (b);2024-03-22
2. Refractiveindex.info database of optical constants;Scientific Data;2024-01-18
3. Optical, electronic, and structural properties of ScAlMgO4;Physical Review B;2023-02-24
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