Interplay between tip-induced band bending and voltage-dependent surface corrugation on GaAs(110) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.195306/fulltext
Reference20 articles.
1. Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors
2. Self-consistent pseudopotential calculation for the relaxed (110) surface of GaAs
3. Comparison betweenab initiotheory and scanning tunneling microscopy for (110) surfaces of III-V semiconductors
4. Relaxation effects on the (110) surface of GaAs
5. Tip-induced Electron Occupation of an Unoccupied Surface State in Scanning Tunneling Microscopy Imaging of a GaAs(110) Surface with Ag Clusters
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