Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.2997/fulltext
Reference23 articles.
1. Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy
2. Atom-selective imaging of the GaAs(110) surface
3. Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metals
4. Scanning-tunneling-microscope tip-induced migration of vacancies on GaP(110)
5. Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures
Cited by 80 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Atomic-scale characterization of highly doped Si impurities in GaAs using scanning tunneling microscopy;Applied Surface Science;2022-05
2. Electronic structure of cubic boron arsenide probed by scanning tunneling spectroscopy;Journal of Physics D: Applied Physics;2021-05-28
3. True bulk As-antisite defect in GaAs(1 1 0) identified by DFT calculations and probed by STM/STS measurements;Applied Surface Science;2020-05
4. Probing the local electronic structure of isovalent Bi atoms in InP;Physical Review B;2020-01-31
5. Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning;Bismuth-Containing Alloys and Nanostructures;2019
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3